Thae Nu Wah, Hla Myo Tun
This paper is done on the analysis of computer-based simulation design for laser diode modeling. The research is emphasized by the relation of electrical and optical properties of the band structure design. For the electrical properties, threshold current temperature dependence, light-current, external differential quantum efficiency, voltage-current, temperature dependence of emission intensity, band-gap energy versus temperature curves, and band diagram are discussed briefly. On the other hand, for the band structure design, the research is emphasized by not only the existing known materials but also the other new materials. The band diagram results are approved by the parameters of the materials such as doping concentrations, effective mass of the materials and so on. Beside the fundamental materials, the band structure also shows the other new materials such as GaAs/GaInAs , and so on. This research will help the researchers who analyze the laser diodes.
Gaas, Gainas, Nitride Semiconductor Laser, Quantum Well Devices