Optical Characterization of in Te:Bi Crystal


Optical Characterization of in Te:Bi Crystal

Nimesh Nanda

Nimesh Nanda "Optical Characterization of in Te:Bi Crystal" Published in International Journal of Trend in Research and Development (IJTRD), ISSN: 2394-9333, Volume-2 | Issue-1 , February 2015, URL: http://www.ijtrd.com/papers/IJTRD13383.pdf

Technology for the crystal growth of ternary alloys of III-V compounds is usable in the field of IR detection. Photo detectors used in military, medical diagnosis and pollution monitoring devicesoperate in wave length range from 8 to 12 ┬Ám. The methods of crystal growth from melt like zone melting and Bridgman have been widely used for such intermetallic. The authors have usedBridgmanmethod because of the steady state growth obtainable with it. EDAX has been used for confirmation of constituent elements ofInTe:Bi. To obtain the band gap FTIR was used for IR Region.

Single crystal, Growth from melt, Band gap


Volume-2 | Issue-1 , February 2015

2394-9333

IJTRD13383
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